| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543240 | Microelectronic Engineering | 2009 | 4 Pages |
Abstract
In this paper, HfO2 dielectric films with blocking layers (BL) of Al2O3 were deposited on high resistivity silicon-on-insulator (HRSOI), and the interfacial and electrical properties are reported. High-resolution transmission electron microscopy (HRTEM) indicated that BL could thin the interfacial layer, keep the interface smooth, and retain HfO2 amorphous after annealing. Energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) confirmed that BL weaken Si diffusion and suppressed the further growth of HfSiO. Electrical measurements indicated that there was no hysteresis was observed in capacitance–voltage curves, and Flatband shift and interface state density is 0.05 V and −1.3 × 1012 cm−2, respectively.
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Authors
Xinhong Cheng, Dapeng Xu, Zhaorui Song, Dawei He, Yuehui Yu, Qingtai Zhao, DaShen Shen,