Article ID Journal Published Year Pages File Type
543281 Microelectronic Engineering 2009 4 Pages PDF
Abstract

Nano-patterned ZnO layer was fabricated by ZnO-sol imprinting with a polymeric mold, followed by annealing. Instead of polymer based imprint resin, ZnO-sol was used as an imprint resin. During the imprinting process, the organic solvent in the ZnO-sol was absorbed into a polymeric mold and thus, ZnO-sol was converted to ZnO-gel. These patterns were subsequently annealed at 650 °C for 1 h in atmospheric ambient to form ZnO patterns. X-ray diffraction (XRD) and photoluminescence (PL) confirmed that ZnO-gel was completely converted into ZnO by annealing. Using this ZnO-sol imprinting method, ZnO nano-patterns, as small as 50 nm, were fabricated on Si and oxidized Si wafer substrates. The ZnO nano-patterns were characterized using scanning electron microscopy (SEM) and Transmission electron microscopy (TEM).

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