| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543286 | Microelectronic Engineering | 2009 | 4 Pages |
Abstract
Sputtered metal gratings have been realized using lift-off process based on bilayer resist electron beam lithography (EBL). The lithography mask is composed of PMMA (poly(methylméthacrylate)) layer deposited under HSQ (hydrogen silsesquioxane) inorganic resist. EBL is performed in HSQ, whereas PMMA is used to ease final lift-off. We demonstrate the possibility of patterning by lift-off metals with different sputtering yields and deposition conditions. Gratings with period of 200 nm and filling factor of 50% are obtained.
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Authors
Liubov Magdenko, Fabien Gaucher, Abdel Aassime, Mathias Vanwolleghem, Philippe Lecoeur, Béatrice Dagens,