Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543292 | Microelectronic Engineering | 2009 | 7 Pages |
Abstract
An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Giovanni Crupi, Dominique M.M.-P. Schreurs, Alina Caddemi, Iltcho Angelov, Majid Homayouni, Antonio Raffo, Giorgio Vannini, Bertrand Parvais,