| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543351 | Microelectronic Engineering | 2009 | 5 Pages |
Integration of GaAs BiFET (bipolar-FET) devices to obtain the optimum performance for multiple functions of MMIC design has been achieved. In this study, heterojunction bipolar transistors (HBTs), enhancement mode pseudomorphic HEMTs (E-pHEMTs), and depletion mode pHEMTs are developed for potential applications, including the integration of HBT power amplifier circuitry with pHEMT-based bias control, logic, RF switch, and low-noise amplifier circuitries. Critical processes including gate photolithography and gate recess control are presented and discussed in detail. The enhancement-depletion modes of pHEMT, HBT electrical performance, and uniformity are investigated comprehensively. In addition, power amplifiers and high power switches based on BiFET technology are investigated.
