| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543383 | Microelectronic Engineering | 2009 | 6 Pages |
Abstract
We review our recent studies of the passivation of the GaAs and InGaAs surface using a combination of insitu and ex situ surface analysis and capacitor measurements. We find that the control of Ga-oxides in particular appears to play an important role in understanding the characteristics of III–V MOS devices.
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Authors
C.L. Hinkle, M. Milojevic, E.M. Vogel, R.M. Wallace,