Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543407 | Microelectronic Engineering | 2009 | 4 Pages |
Abstract
We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high-k gate dielectric in a gate first integration scheme. There silicon diffuses into gadolinium oxide (Gd2O3) from a silicon oxide (SiO2) interlayer specifically prepared for this purpose. We report on the scaling potential based on detailed material analysis. Gate leakage current densities and EOT values are compatible with an ITRS requirement for low stand by power (LSTP). The applicability of this GdSiO process is demonstrated by fully functional silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs).
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
H.D.B. Gottlob, M. Schmidt, A. Stefani, M.C. Lemme, H. Kurz, I.Z. Mitrovic, W.M. Davey, S. Hall, M. Werner, P.R. Chalker, K. Cherkaoui, P.K. Hurley, J. Piscator, O. Engström, S.B. Newcomb,