| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543409 | Microelectronic Engineering | 2009 | 4 Pages |
Abstract
A stack structure consisting of ∼1.5 nm-thick LaOx and ∼4.0 nm-thick HfO2 was formed on thermally grown SiO2 on Si(1 0 0) by MOCVD using dipivaloymethanato precursors, and the influence of N2 annealing on interfacial reaction for this stack structure was examined by using X-ray photoelectron spectroscopy and Fourier transform infrared attenuated total reflection. We found that compositional mixing between LaOx and HfO2 becomes significant from 600 °C upwards and that interfacial reaction between HfLayOz and SiO2 proceeds consistently at 1000 °C in N2 ambience.
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Authors
Akio Ohta, Daisuke Kanme, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki,