Article ID Journal Published Year Pages File Type
543414 Microelectronic Engineering 2009 4 Pages PDF
Abstract

We have calculated the oxygen vacancy levels in Al2O3 using first principles methods. They are found to lie just below midgap in the oxide, equivalent to below the Si valence band edge when aligned to the silicon band structure. This low energy accounts for the behaviour of Al2O3 in oxide capping layers and as an insulator in future Flash memory.

Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
, ,