Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543422 | Microelectronic Engineering | 2009 | 4 Pages |
Abstract
Amorphous lanthanum aluminate thin films were deposited by atomic layer deposition on Si(1 0 0) using La(iPrCp)3, Al(CH3)3 and O3 species. The effects of post-deposition rapid thermal annealing on the physical and electrical properties of the films were investigated. High-temperature annealing at 900 °C in N2 atmosphere leads to the formation of amorphous La-aluminosilicate due to Si diffusion from the substrate. The annealed oxide exhibits a uniform composition through the film thickness, a large band gap of 7.0 ± 0.1 eV, and relatively high dielectric constant (κ) of 18 ± 1.
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Authors
G. Congedo, S. Spiga, L. Lamagna, A. Lamperti, Yu. Lebedinskii, Yu. Matveyev, A. Zenkevich, P. Chernykh, M. Fanciulli,