Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543425 | Microelectronic Engineering | 2009 | 4 Pages |
Abstract
SiO2 gate dielectric layers (4–60 nm) were grown (0.6 nm/min) by plasma-enhanced chemical vapor deposition (PECVD) in strongly diluted silane plasmas at low substrate temperatures. In contrast to the well-accepted positive charge for thermally grown silicon dioxide, the net oxide charge was negative and a function of layer thickness. Our experiments suggested that the negative charge was created due to unavoidable oxidation of the silicon surface by plasma species, and the CVD component added a positive space charge to the deposited oxide. The net charge was negative under process conditions where plasma oxidation played a major role. Such conditions include low deposition rates and the growth of relatively thin layers.
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Authors
A. Boogaard, A.Y. Kovalgin, R.A.M. Wolters,