Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543445 | Microelectronic Engineering | 2009 | 4 Pages |
Abstract
In this paper the tuning of the n-metal effective work function by implantation of lanthanum is demonstrated. The effect of implantation and thermal annealing on the device flat-band voltage is presented. It is shown that lanthanum doping of the gate stack produces a negative shift of the flat-band voltage of −0.53 V for a lanthanum does of 5 × 1014 cm−2, after the device undergoes S/D anneal conditions. The results are discussed within the framework of a phenomenological dipole model and compared with other results
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Authors
A. Fet, V. Häublein, A.J. Bauer, H. Ryssel, L. Frey,