Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543450 | Microelectronic Engineering | 2009 | 5 Pages |
Abstract
Introduction of high-k dielectrics in Flash memory is seen as a must for the upcoming technology nodes. Hafnium aluminate (HfAlO) has been identified as a possible candidate for implementing the interpoly dielectric in floating gate memory. In this work, we establish a link between the material morphology and its electrical response, allowing to understand memory device behavior and to consequently assess the potential and limitations of HfAlO as IPD in a memory cell.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
B. Govoreanu, R. Degraeve, M.B. Zahid, L. Nyns, M. Cho, B. Kaczer, M. Jurczak, J.A. Kittl, J. Van Houdt,