Article ID Journal Published Year Pages File Type
543450 Microelectronic Engineering 2009 5 Pages PDF
Abstract

Introduction of high-k dielectrics in Flash memory is seen as a must for the upcoming technology nodes. Hafnium aluminate (HfAlO) has been identified as a possible candidate for implementing the interpoly dielectric in floating gate memory. In this work, we establish a link between the material morphology and its electrical response, allowing to understand memory device behavior and to consequently assess the potential and limitations of HfAlO as IPD in a memory cell.

Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
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