| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543466 | Microelectronic Engineering | 2009 | 4 Pages |
Abstract
From experiments on photoluminescence in Si3N4 the polaron energy of 1.4 eV was determined. This value is in agreement with the energy of thermal ionization determined from electron and hole transport. Quantum-chemical simulation showed that Si–Si bond is able to capture holes and electrons in Si3N4.
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Authors
V.A. Gritsenko, S.S. Nekrashevich, V.V. Vasilev, A.V. Shaposhnikov,