Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543510 | Microelectronic Engineering | 2008 | 5 Pages |
Abstract
Properties of ZnO films grown by atomic layer deposition at low temperature are described. By selecting appropriate precursors and their pulses we obtained films with controlled electrical properties – from heavily n-type to p-type. Parameters of constructed Schottky and p–n junction are good enough for their application in a new generation of memory devices with cross-bar architecture.
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Authors
M. Godlewski, E. Guziewicz, J. Szade, A. Wójcik-Głodowska, Ł. Wachnicki, T. Krajewski, K. Kopalko, R. Jakieła, S. Yatsunenko, E. Przeździecka, P. Kruszewski, N. Huby, G. Tallarida, S. Ferrari,