| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543555 | Microelectronic Engineering | 2008 | 6 Pages |
Abstract
Electrical measurements have been reported sandwich device fabricated from DNA molecular film located between Al and p-type InP inorganic semiconductor. We have observed that DNA-based this structure shows an excellent rectifying behavior, and that the DNA film increases the effective barrier height by influencing the space charge region of InP. We have also evaluated electrical characteristics of the DNA-based device in a wide temperature range.
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Authors
Ö. Güllü, M. Çankaya, Ö. Barış, A. Türüt,