| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543590 | Microelectronic Engineering | 2008 | 6 Pages |
Abstract
In this study chemical mechanical planarization slurries for shallow trench isolation exhibiting high oxide to nitride polish rate selectivity were investigated and it was found that the abrasives play a major role in suppressing the nitride polish rate and enhancing selectivity. When glutamic acid is used as a selectivity enhancing additive, only ceria based slurries exhibit high selectivity while silica based slurries show low selectivity under identical conditions. A mechanism involving active sites on the ceria abrasive and interaction of glutamic acid with the active sites is proposed to explain the role of abrasive in enhancing selectivity.
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Authors
R. Manivannan, S. Ramanathan,