Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543592 | Microelectronic Engineering | 2008 | 4 Pages |
Abstract
Hf–O–N and HfO2 thin films were evaluated as barrier layers for Hf–Ti–O metal oxide semiconductor capacitor structures. The films were processed by sequential pulsed laser deposition at 300 °C and ultra-violet ozone oxidation process at 500 °C. The as-deposited Hf–Ti–O films were polycrystalline in nature after oxidation at 500 °C and a fully crystallized (o)-HfTiO4 phase was formed upon high temperature annealing at 900 °C. The Hf–Ti–O films deposited on Hf–O–N barrier layer exhibited a higher dielectric constant than the films deposited on the HfO2 barrier layer. Leakage current densities lower than 5 × 10 A/cm2 were achieved with both barrier layers at a sub 20 Å equivalent oxide thickness.
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Hardware and Architecture
Authors
K. Ramani, R.K. Singh, V. Craciun,