| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543596 | Microelectronic Engineering | 2008 | 5 Pages |
Abstract
In order to study the chemical–mechanical polishing (CMP) characteristics of indium–tin oxide (ITO) thin film with a sufficient removal amount and a good planarity, the optimal CMP process conditions were determined by using a design of experiment (DOE) approach. The electrical and optical properties, such as current–voltage (I–V) curve and photoluminescence spectrum, were discussed in order to evaluate the possibility of the CMP application for an organic light emitting diode (OLED) device using an ITO film. The electrical I–V characteristics and optical properties of ITO thin film were improved after the CMP process using optimized process conditions compared to that of as-deposited thin film before the CMP process.
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Authors
Yong-Jin Seo, Gwon-Woo Choi, Woo-Sun Lee,