Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543672 | Microelectronic Engineering | 2008 | 5 Pages |
Abstract
This paper presents experimental results and simulation studies of resist processes for contact printing. A resolution of 200 nm can be achieved using simple binary masks, conventional photoresist, and standard mercury arc lamp illumination. Simulation helps to understand typical resist artifacts in dense structures, and allows the design of optimal masks and process conditions.
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Authors
B. Meliorisz, S. Partel, T. Schnattinger, T. Fühner, A. Erdmann, P. Hudek,