Article ID Journal Published Year Pages File Type
543672 Microelectronic Engineering 2008 5 Pages PDF
Abstract

This paper presents experimental results and simulation studies of resist processes for contact printing. A resolution of 200 nm can be achieved using simple binary masks, conventional photoresist, and standard mercury arc lamp illumination. Simulation helps to understand typical resist artifacts in dense structures, and allows the design of optimal masks and process conditions.

Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
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