| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543845 | Microelectronic Engineering | 2008 | 4 Pages |
Abstract
We have investigated the characteristics of Ar/O2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled plasma (ICP) etcher. We found that the O2/(O2+ Ar) gas flow ratio significantly affected the PR etching rate and the PR to low-k material etch selectivity. Fourier transform infrared spectroscopy (FTIR) and HF dipping test indicated that the etching damage to the low-k material decreased with decreasing O2/(O2 + Ar) gas flow ratio.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Hyoun Woo Kim, Jong Woo Lee, Woon Suk Hwang, Beom Hoan O, Seung Gol Lee, Se-Geun Park, Joohee Kim, Duck Jin Chung, Sung Pil Chang, Young-Chang Joo, Junghoon Joo, Chin Wook Chung, Wan Jae Park, Chang-Jin Kang, Sukho Joo, Soon Oh Park, Chung-Gon Yoo,