Article ID Journal Published Year Pages File Type
543848 Microelectronic Engineering 2008 5 Pages PDF
Abstract

The annealing conditions causing an irregular peak in sheet resistance of nickel silicides are investigated. It is found that the irregular rise in sheet resistance occurs at a critical temperature of 750–775 °C as a result of agglomeration related to phase transition from NiSi to NiSi2. Experiments on the effect of temperature, heating rate and annealing duration in rapid thermal annealing revealed that the high-resistance state produced by annealing at the critical temperature could not be changed by subsequent annealing at higher temperature, and that the high-resistance state required 30–40 s at the critical temperature to form. Pre-annealing at 600 °C was found to suppress the later formation of the high-resistance state.

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