Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543848 | Microelectronic Engineering | 2008 | 5 Pages |
Abstract
The annealing conditions causing an irregular peak in sheet resistance of nickel silicides are investigated. It is found that the irregular rise in sheet resistance occurs at a critical temperature of 750–775 °C as a result of agglomeration related to phase transition from NiSi to NiSi2. Experiments on the effect of temperature, heating rate and annealing duration in rapid thermal annealing revealed that the high-resistance state produced by annealing at the critical temperature could not be changed by subsequent annealing at higher temperature, and that the high-resistance state required 30–40 s at the critical temperature to form. Pre-annealing at 600 °C was found to suppress the later formation of the high-resistance state.
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Authors
Kazuo Tsutsui, Ruifei Xiang, Koji Nagahiro, Takashi Shiozawa, Parhat Ahmet, Yasutoshi Okuno, Michikazu Matsumoto, Masafumi Kubota, Kuniyuki Kakushima, Hiroshi Iwai,