| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543897 | Microelectronic Engineering | 2007 | 4 Pages |
We investigate the influence of aluminum oxide (AlO) capping on SiON on the threshold voltage and Ion of Poly-Si/TiN gated pMOSFETs. The AlO capping resulted in threshold voltage (VT) reduction and improvement in drive current (Ion) for Poly-Si/TiN/ gated pFETS. The AlO capping on SiON also improved the interface quality making the gate stack more thermally stable. The leakage and reliability characteristics for the Poly-Si/AlO/SiON stacks are evaluated and compared with the uncapped Poly-Si/TiN/SiON reference. The AlO capping resulted in two orders of magnitude decrease in leakage at the same capacitance equivalent thickness (CET) compared to the un-capped Poly-Si/TiN/SiON reference. The AlO capping also resulted in improvement lifetime compared to the un-capped Poly-Si/TiN/SiON reference.
