Article ID Journal Published Year Pages File Type
543914 Microelectronic Engineering 2007 5 Pages PDF
Abstract

In this work, we confirm that the energy is the driving force of Hot Carrier effects. When the energy is high, the Energy-driven framework allows to retrieve Lucky Electron Model-like equations. But when the energy is lowered, high energy electrons generated by Electron-Electron Scattering become the dominant contribution to the degradation. For even lower energy Multiple Vibrational Excitation mechanism starts taking the lead.

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Physical Sciences and Engineering Computer Science Hardware and Architecture