| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 543914 | Microelectronic Engineering | 2007 | 5 Pages | 
Abstract
												In this work, we confirm that the energy is the driving force of Hot Carrier effects. When the energy is high, the Energy-driven framework allows to retrieve Lucky Electron Model-like equations. But when the energy is lowered, high energy electrons generated by Electron-Electron Scattering become the dominant contribution to the degradation. For even lower energy Multiple Vibrational Excitation mechanism starts taking the lead.
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