| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543944 | Microelectronic Engineering | 2007 | 4 Pages |
Abstract
Field-effect transistors with metal gate and HfO2 gate dielectric on silicon-passivated germanium substrate are studied. Capacitance-Voltage characteristics show lower gate capacitance at negative gate voltages, irrespective of the device channel polarity. Possible mechanisms for this asymmetry are discussed. Reliability of the metal/high-k gate stack on sub-micron p-channel transistors is evaluated. Time-dependent dielectric breakdown analysis indicates comparable gate-stack quality on germanium and silicon substrates.
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