High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs

In this paper, the electrical characteristics of multi-gate MOSFETs (MUGFETs) using the advanced radical gate oxide and a suppression of Negative bias temperature degradation in accumulation mode FD-SOI MOSFETs are described. Firstly, we experimentally demonstrate that the multi-gate MOSFETs using radical oxide effectively suppress the degradation of S-factor values resulted from its superior oxidation at the sidewall. Secondly, we indicate that the device performance is dramatically improved by introducing MUGFETs device structure originated from its effective channel area. Finally, we reveal the improvement of current drivability and a suppression of Negative bias temperature instability (NBTI) in accumulation mode FD-SOI MOSFETs.