Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation

The degradation of the electrical properties of thin gate oxide PD-SOI n-MOSFETs by 2-MeV electrons at different dose rates is presented. The degradation of the back channel and its dependence on dose rate are clarified. The characteristics of the PD-SOI MOSFETs are degraded, and the degradation becomes higher for a low dose rate. The magnitude of the hysteresis characteristics in the drain current becomes smaller after irradiation, and the degradation for a low dose rate is higher than for a high dose rate. It is found that the degradation of the front characteristics is related to the back gate degradation by the coupling effect.