| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543962 | Microelectronic Engineering | 2007 | 4 Pages |
Abstract
We report a study of MOS capacitors having a dielectric of HfO2 and an interlayer of Si deposited in-situ, by MBE on GaAs surfaces prepared with various surface-reconstructions. Interface state densities of about 1 × 1012 eV−1cm−2 have been obtained. Capacitors on the Ga-rich surface, measured with peripheral illumination, show signs of a possible inversion layer.
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