| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543963 | Microelectronic Engineering | 2007 | 4 Pages |
Abstract
The commonly encountered frequency dispersion and distorted behavior of GaAs and III-V MOS C-V and G-V is clarified by using MOS interface state theory. The relation of the C-V behavior with Fermi-level pinning of III-V MOS is explained. It is shown why it is difficult to quantify the interface state density using the conductance method for III-V MOS. A qualitative distinction of interface state behavior from common frequency dispersion due to series resistance is also put forward and guidelines are given to properly interpret III-V admittance data.
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