| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543965 | Microelectronic Engineering | 2007 | 4 Pages |
Abstract
Photoluminescence intensity (PLI) measurements of GaAs and InGaAs thin films indicate that InGaAs might be inherently easier to passivate than GaAs. The introduction of just 15% of In leads to a reduction of the surface recombination velocity at native oxide interfaces by an order of magnitude. This is more than the effect expected by a reduced bandgap alone. The PLI method applied to thin films can also be used to determine the surface recombination velocity of other IIIV-oxide interfaces.
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