Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543973 | Microelectronic Engineering | 2007 | 4 Pages |
Abstract
High-k gate dielectric process is the key technology for nano-scale MOS device. A nitridation treatment on silicon surface is promising for characteristic improvement on high-k dielectric. It is found in this work that the electrical characteristics of high-k gated MOS devices can be improved by a nitridation treatment at silicon surface using plasma immersion ion implantation (PIII) at low ion energy and with a short implantation time. A shallow nitrogen profile at Si surface is known to be favorable for further enhancement of device properties.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture