Article ID Journal Published Year Pages File Type
543982 Microelectronic Engineering 2007 5 Pages PDF
Abstract

The electrically active defects in high-k/SiO2 dielectric stacks are examined using a combination of low frequency noise (LFN) and charge pumping (CP) methods. The volume trap profile in the stacks is obtained by modeling the drain current noise spectra and charge pumping currents, with each technique covering a different depth range. The LFN is dependent on both the high-k and interfacial (IL) SiO2 thicknesses while the CP current is mainly dependent on the IL thickness.

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