| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544076 | Microelectronic Engineering | 2006 | 5 Pages |
Abstract
Ultrathin Vanadium nitride (VN) thin film with thickness around 10 nm was studied as diffusion barrier between copper and SiO2 or Si substrate. The VN film was prepared by reactive ion beam sputtering. X-ray diffraction, Auger electron spectroscopy, scanning electron microscopy and current–voltage (I–V) technique were applied to characterize the diffusion barrier properties for VN in Cu/VN/Si and Cu/VN/SiO2 structures. The as-deposited VN film was amorphous and could be thermal stable up to 800 °C annealing. Multiple results show that the ultrathin VN film has good diffusion barrier properties for copper.
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Authors
Xin-Ping Qu, Mi Zhou, Tao Chen, Qi Xie, Guo-Ping Ru, Bing-Zong Li,