Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
544085 | Microelectronic Engineering | 2006 | 9 Pages |
Abstract
In this work, we present our two-dimensional numerical simulation studies and analysis of the enhanced breakdown and self-heating characteristics of a new collector-tub three-zone step doped thin-film lateral bipolar transistor (CT-SLBT) on silicon-on-insulator (SOI), which shows enhanced breakdown voltage as high as 80% when compared with that of the conventional uniformly doped lateral bipolar transistor (LBT) on SOI. The design issues and the reasons for the improved performance are discussed in detail.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Sukhendu Deb Roy, M. Jagadesh Kumar,