| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544109 | Microelectronic Engineering | 2016 | 4 Pages |
•Simple chemical route synthesis of delafossite structured CuFeO2•P-type conductivity enhancement with mixed phase of CuO•CuO induced defect states and formation of quasi-conduction band•Excellent Schottky diode characteristics in I–V measurements
Delafossite structures are of significant importance in the recent context of development of structured and engineered materials because of their natural super lattice structure. The delafossite structured CuFeO2 mixed with crystalline CuO phase has been prepared by the simple chemical method of sol-gel technique on fluorine doped tin oxide (FTO) coated glass substrate. The mixed phase of delafossite structured CuFeO2 with crystalline CuO was appeared on annealing the film at 723 K. The prepared film was characterized with X-ray diffraction measurements, atomic force microscopy, UV–Vis-NIR spectrophotometry and electrical I–V measurements. The optical energy band gap of 2.63 eV was obtained from the UV–Vis-NIR spectrophotometric measurements. On electrical characterization of the film, the (I–V) measurements show a Schottky diode like characteristics.
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