| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544139 | Microelectronic Engineering | 2016 | 4 Pages |
The through-Si-via (TSV) interconnection provides the ideal 3D interconnection in a next generation semiconductor device which has significantly innovated function, excellent performance and high efficiency. In this study, TSV fillings by electrodeposition of Cu with various current forms were carried out to improve the via filling rate. Especially, the influence of reverse current density and average current density on the TSV filling property was studied. ~ 7% of improvement in via filling rate compared with using direct current (DC) was achieved by applying the pulse-reverse current form, which was mainly caused by effective adsorption and redistribution of additives inside via.
Graphical abstractTSV fillings by electrodeposition of Cu with pulse-reverse current were carried out to improve the via filling rate. Influence of reverse current density and average current density on the TSV filling property was focused on.Figure optionsDownload full-size imageDownload as PowerPoint slide
