Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
544148 | Microelectronic Engineering | 2016 | 6 Pages |
Abstract
The strain distribution induced by TSVs is extensively studied in silicon by using submicron resolution synchrotron X-ray diffraction techniques. Simulations with finite elements are performed to interpret the experimental strain results. Stress and strain in silicon are found to be small at room temperature (< 7 × 10− 5), while measurements and simulations at annealing temperature (400 °C) show a reverse sign of strain and support a plastic behavior of copper in some regions of the TSV.
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Physical Sciences and Engineering
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Authors
B. Vianne, S. Escoubas, C. Krauss, M.-I. Richard, S. Labat, G. Chahine, J.-S. Micha, T. Schülli, V. Fiori, A. Farcy, O. Thomas,