| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544186 | Microelectronic Engineering | 2015 | 5 Pages |
•Effect of plasma treatment on ITO film is investigated.•Nitrogen plasma is most effective for reducing defects and trap concentration.•Nitrogen plasma lowers the impedance of ITO substrate.•Nitrogen plasma maintains ohmic contact for a wide range of frequencies.•The Schottky diode structure is used to verify these observations.
Organic Schottky diodes (OSDs) with various plasma treated Indium Tin Oxide (ITO) as anodic electrode are prepared and tested to investigate the effect of plasma treatment on their performance. Oxygen plasma treated ITO (O-ITO), nitrogen plasma treated ITO (N-ITO) and plasma untreated ITO (U-ITO) are used. The current density–voltage analysis and electrochemical impedance spectroscopic analysis are utilized in the study. The frequency-dependent response is interpreted in terms of an equivalent-circuit model consisting of three resistors, two capacitors, and one inductor. Device parameters are extracted by fitting equivalent circuit with obtained impedance data. Capacitance–voltage (C–V), and ac conductance–voltage (G(ω)–V) features of the OSDs are analyzed in the frequency of 1 kHz. It has been concluded that the OSDs fabricated using N-ITO showed lower impedance and higher capacitance than other devices.
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