| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544226 | Microelectronic Engineering | 2013 | 4 Pages |
•The SnS/Si device with sulfide treatment for 40 s showed a good rectifying behavior.•Sulfide treatment led to reductions in an ideality factor and series resistance.•Sulfide treatment led to enhanced power conversion efficiency (PCE) of solar cells.•The enhanced PCE is due to the rectifying performance and interface passivation.•A suitable sulfide treatment time is also an important issue for enhancing PCE.
The fabrication and detailed electrical properties of heterojunction diodes based on n-type SnS (n-SnS) and p-type Si (p-Si) were reported. The effect of sulfide treatment of p-Si on the power conversion efficiency (PCE) of the n-SnS/unpolished p-Si solar cell was investigated. The n-SnS/unpolished p-Si device without sulfide treatment showed a rectifying behavior with an ideality factor (η) of 1.6 and high series resistance (Rs). However, the n-SnS/unpolished p-Si diode with sulfide treatment for 40 s showed a good rectifying behavior with η of 1.4 and low Rs. Therefore, the enhanced PCE can be interpreted by the device rectifying performance and interface passivation. In addition, note that a suitable sulfide treatment time is an important issue for producing high-efficiency solar cells.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slide
