| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544227 | Microelectronic Engineering | 2013 | 4 Pages |
•The thin film transistor based on sol–gel processed zinc oxide was fabricated.•The ZnO film is formed from the microfibers.•The solution-processed ZnO TFT was found to exhibit a high mobility of 0.47 cm2/V.s.
The high mobility n-type thin film transistor based on sol–gel processed zinc oxide (ZnO) was fabricated. The ZnO thin film was prepared by spin coating the precursor solution on a SiO2 dielectric layer. AFM results indicate that the ZnO film is formed from the microfibers. The solution-processed ZnO TFT was found to exhibit a high mobility of 0.47 cm2/V.s. This indicates that the microfiber ZnO film has a important effect to fabricate a high mobility ZnO thin film transistor.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slide
