| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544350 | Microelectronic Engineering | 2012 | 4 Pages |
In this study, resistive random access memory (ReRAM) devices are fabricated using solution-processable sulfur-doped GeO2 (GeO2:S) on flexible substrates. The Al/GeO2:S/Au ReRAM devices exhibit the unipolar resistive switching behavior with an on/off ratio of more than 107 and the memory characteristics are retained after 104 s. The memory characteristics are unaffected by strains, even after the continuous substrate bending test for 103 cycles.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► ReRAM devices are fabricated with solution-processable GeO2:S on flexible substrates. ► The Al/GeO2:S/Au ReRAM devices exhibit unipolar resistive switching behavior. ► The on/off ratio is about 107. ► The memory characteristics are retained after 104 s. ► The memory characteristics are retained even after bending test for 103 cycles.
