| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544354 | Microelectronic Engineering | 2012 | 6 Pages |
An experimental study and modeling of double-surrounding-gate (DSG) and silicon-on-nothing surrounding-gate (SONSG) MOSFETs are presented. The manufacturing challenges of advanced multiple-gate MOSFETs are discussed; and DSG and SONSG devices are proposed as potential solutions to overcome these fabrication challenges. The analytic general solution to cylindrical (nonlinear) Poisson’s equation is applied to analyze DSG and SONSG device performance. Numerical issues of solving two coupled implicit transcendental equations to obtain two integration constants are addressed. It is found that under the same boundary conditions, concentration of the induced charge in a DSG MOSFET is comparable to a conventional double-gate MOSFET.
Graphical abstract.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► The manufacturing challenges of conventional multi-gate MOSFETs are discussed. ► Double-surrounding-gate and cylindrical silicon-on-nothing MOSFETs are proposed as potential solutions. ► The general solution to cylindrical Poisson’s equation is applied to analyze the device performance. ► Numerical issues of solving coupled implicit transcendental equations are addressed. ► Concentration of the induced charge in a DSG MOSFET is comparable to a double-gate MOSFET.
