| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544396 | Microelectronic Engineering | 2012 | 6 Pages |
In this article we report on carving nanopores into suspended graphene sheets using a finely focused and shaped gallium ion beam. We show that in addition to serving as a nearly ideal substrate for high resolution patterning, suspended graphene can be patterned with high accuracy using a methodology that is described. Furthermore, shapes and dimensions of the fabricated nanopores were investigated, showing stable structures that do not follow the circular shape of the FIB probe. These results highlight the role of preferential engraving directions during the carving process of the graphene material. We conclude in confirming the highly insulating properties of such graphene when immersed in an ionic solution, which is of particular interest for experiments such as DNA translocation.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Advanced Ga-FIB technology is capable of carving lines and holes into graphene flakes. ► FIB cutting efficiency depends on film orientation and roll-on effects are evidenced. ► Smallest fabricated holes about 10 nm in diameter have irregular shapes.
