| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544420 | Microelectronic Engineering | 2012 | 5 Pages |
High quality semiconductor layer of n-type ZnO thin film was fabricated on F-doped SnO2 glass substrates by pulsed laser deposition. The Schottky junction diodes with configuration of Ag/ZnO/FTO have been fabricated to study the devices electrical properties by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The results show that the devices have good rectifying behaviors with an ideality factor of 1.64 and a Schottky barrier height of 0.85 eV based on the I–V characteristics. Also, Cheung’s functions and Norde’s method were used to evaluate the I–V characteristics and to obtain the series resistance of the Schottky contact. From the C–V characteristics, the capacitance was determined to increase with decrease of frequencies. C–V measurements have resulted in higher barrier heights than those obtained from I–V measurements. The discrepancy between Schottky barrier heights obtained from I–V and C–V measurements was also interpreted.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► High performance Ag/ZnO Schottky diodes were fabricated on FTO glass substrates. ► The electrical properties of Ag/ZnO diode were investigated by I–V and C–V method. ► The electrical parameters of the Ag/ZnO diodes were obtained and analyzed.
