| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544425 | Microelectronic Engineering | 2012 | 4 Pages |
Polycrystalline ZnO films are deposited on Pt/Ti/SiO2/Si substrate by chemical solution deposition (CSD) method. Metal/ZnO/Pt sandwich structures were constructed by depositing different top electrodes. Unipolar switching and bipolar switching characteristics were investigated in Pt/ZnO/Pt and Ag/ZnO/Pt structures, respectively. Analysis of linear fitting current–voltage curves suggests that the space charge limited leakage was observed as the limiting leakage mechanism of these two devices. And, the electrochemical migration of oxygen vacancies and metal ions resulted from the selecting electrodes was applied to explain the resistive switching behaviors.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Metal/ZnO/Pt sandwich structures were constructed with different top electrodes. ► Uni- and bi-polar switching were studied in Pt/ZnO/Pt and Ag/ZnO/Pt structures. ► Electrochemical migration was applied to explain the resistive switching behaviors.
