Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
544435 | Microelectronic Engineering | 2012 | 4 Pages |
Integration in a single chip using localized optical phenomena is one of the possible approaches to attain the accuracy, portability and affordability required for future biosensing devices. We address this problem by investigating a grating-coupled quantum well (QW) surface plasmon resonance (SPR) device that comprises a monolithically integrated source of light and a bio-sensitive surface. The successful operation of such a device requires, in addition to the optimization of its architecture, the use of high quality thin films with smooth surface morphology. Here, we present the results of studying a variety of dielectric and Au films intended for the fabrication of QW-SPR devices. For dielectrics, we found that SiO2 films obtained by plasma-enhanced chemical vapor deposition have the best surface morphology and optical properties appropriate for our device. The films of Au fabricated with deposition rates exceeding 0.3 nm/s exhibited relatively smooth surface morphology, however the presence of surface micro-inclusions reduced the attractiveness of such films. To avoid sample overheating that occurs at extremely slow deposition rates, we optimized the fabrication of Au films at 0.05 and 0.2 nm/s.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We have investigated fabrication of monolithically integrated SPR biosensing devices. ► PECVD offers SiO2 films of superior optical properties. ► The Au films by e-beam at deposition rates not exceeding 0.3 nm/s are desirable. ► Deposition at 0.5 nm/s allows avoiding the excessive heating of photoresists.