Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
544451 | Microelectronic Engineering | 2012 | 4 Pages |
Effects of HF & H2SO4 pretreatment conditions on the interfacial bonding strength of Cu–Cu direct bonds were systematically investigated. The evaluated interfacial adhesion energies for 3 μm-thick Cu bonding layers were 0.58, 0.46, and 4.90 J/m2 for different HF & H2SO4 pretreatment times of 0, 15, and 30 s, respectively, with bonding temperature of 350 °C, which is ascribed to the effective removal of native surface oxide at optimum wet cleaning conditions before Cu–Cu bonding.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Effects of HF & H2SO4 pretreatment on the bonding toughness of Cu–Cu bonds were investigated. ► The interfacial adhesion energies for Cu bonding layers were 0.58 to 4.90 J/m2 each condition. ► This result shows that the effective removal of native surface oxide at optimum wet cleaning conditions before Cu-Cu bonds.