Effect of hydrogen atmosphere in Cu thin film growth by chemical vapor deposition using Cu(dmamb)2

A high quality Cu seed layer was successfully prepared by chemical vapor deposition (CVD) from the newly synthesized Cu(dmamb)2 precursor. The growth behavior of Cu thin film was systematically investigated, with particular focus on the effect of growth temperature and atmosphere on the Cu seed layer properties. The grain size of the Cu thin film was enhanced by hydrogen atmosphere and the residual impurity in the Cu thin film was effectively reduced. The resistivity of the Cu thin film depended on the grain size and impurity concentration. A Cu seed layer was successfully obtained with resistivity of 37 μ Ω cm and thickness of 27 nm. These results demonstrated the possibility of fabricating a high quality Cu seed layer by CVD using the Cu(dmamb)2 precursor.

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