The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2–HfO2 stacks and Au nanocrystals

We demonstrate the possibility to control charge trapping in the memory stacks comprised of metal nanocrystals (NCs) sandwiched between SiO2 and high-k dielectric films by light irradiation. Non-equilibrium depletion effects in the state of the art charge trapping memories are reported for the first time. The studied nonvolatile memory devices employ Au NCs, thermal SiO2 tunnel layer, atomic layer deposited HfO2 blocking layer and Au/Pt metal gate. The memory windows are 3 V and 10.5 in the dark and under illumination for ±10 V programming voltages. Reliability limitations of the studied structure, in particular leakage currents and effects in high electric fields have been investigated in detail and are discussed in view of the mentioned device application. Low programming voltages and currents, and high light sensitivity make suggested NVM structures promising for developing digital imagers with ultra-low power consumption.