Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
544561 | Microelectronic Engineering | 2011 | 5 Pages |
Abstract
TaCN films were deposited using atomic layer deposition (ALD) using PDMAT and H2/Ar plasma. Calculations based on density functional theory (DFT) indicate a high energy barrier and a low reaction energy for reducing the +5 Ta oxidation state in the PDMAT precursor by using pure H radicals. Through the assistance of Ar radicals, low resistivity of TaCN films of 230 μΩ cm could be deposited by using H2/Ar plasma. By employing in situ X-ray diffraction during annealing, the activation energy for Cu diffusion through the TaCN barrier was evaluated at 1.6 eV.
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Authors
Qi Xie, Davy Deduytsche, Jan Musschoot, Roland L. Van Meirhaeghe, Christophe Detavernier, Shao-Feng Ding, Xin-Ping Qu,